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| Silicon MOS FETs (Small Signal) 2SK665 Silicon N-Channel MOS FET For switching unit: mm 2.10.1 s Features q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage 0.65 0.425 1.250.1 0.425 1 2.00.2 1.30.1 0.65 3 2 0.90.1 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150 -55 to +150 Unit V V mA mA mW C C 0.70.1 0 to 0.1 0.20.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3O Internal Connection D R1 G R2 S s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Turn-on time Turn-off time *1 Symbol IDSS IGSS VDSS Vth RDS(on)*3 | Yfs | VOH VSL R1 + R2*1 ton*2 toff*2 *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100A, VGS = 0 ID = 100A, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200 VDD = 5V, VGS = 5V, RL = 200 VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 5 to 0V, RL = 200 *3 min 40 20 1.5 20 4.5 100 typ max 10 80 3.5 50 1 200 1 1 Resistance ratio R1/R2 = 1/50 Vout 200 ton, toff measurement circuit Pulse measurement 90% 100F VGS = 5V 50 Vin VDD = 5V Vout 10% 10% 90% ton toff 0.15-0.05 +0.1 s Absolute Maximum Ratings (Ta = 25C) 0.2 0.3-0 +0.1 Unit A A V V mS V V k s s 1 Silicon MOS FETs (Small Signal) PD Ta 240 120 Ta=25C 200 100 100 2SK665 ID VDS 120 VDS=5V ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 80 Drain current ID (mA) VGS=6.0V 5.5V 5.0V 4.5V 40 80 Ta=-25C 25C 120 60 60 75C 80 4.0V 3.5V 3.0V 40 40 20 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 50 Ciss, Coss VDS Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) VDS=5V Ta=25C VGS=0 f=1MHz Ta=25C Ciss 8 RDS(on) VGS Drain to source ON-resistance RDS(on) () 120 ID=20mA 100 12 Forward transfer admittance |Yfs| (mS) 40 10 80 30 6 60 Ta=75C 20 4 Coss 40 25C -25C 10 2 20 0 0 2 4 6 8 10 0 0.1 0 0 2 4 6 8 10 0.3 1 3 10 30 100 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) VIN IO 1000 300 VO=1V Ta=25C Input voltage VIN (V) 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2 |
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